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15A 600V Fast Recovery Diode Mur1560A
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436.

15A 600V Fast Recovery Diode Mur1560A Open Details in New Window [Sep 05, 2023]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode Mur80fu20nca to-247
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437.

80A 200V Fast Recovery Diode Mur80fu20nca to-247 Open Details in New Window [Sep 05, 2023]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Low Vf Schottky Barrier Diode Hmbr20r60
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438.

20A 60V Low Vf Schottky Barrier Diode Hmbr20r60 Open Details in New Window [Aug 31, 2023]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 1200V Fast Recovery Diode Mur8120 to-220-2L
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439.

8A 1200V Fast Recovery Diode Mur8120 to-220-2L Open Details in New Window [Aug 24, 2023]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 300V Fast Recovery Diode Mur4030DCT to-3p
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440.

40A 300V Fast Recovery Diode Mur4030DCT to-3p Open Details in New Window [Aug 23, 2023]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Low Schottky Barrier Diode Mbr30r100CT to-220
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441.

30A 100V Low Schottky Barrier Diode Mbr30r100CT to-220 Open Details in New Window [Aug 23, 2023]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Mbr4060CT to-3p 40A 60V Schottky Barrier Diode
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442.

Mbr4060CT to-3p 40A 60V Schottky Barrier Diode Open Details in New Window [Aug 23, 2023]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220
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443.

10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220 Open Details in New Window [Aug 23, 2023]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 100V Schottky Barrier Diode Mbr16100CT to-220
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444.

16A 100V Schottky Barrier Diode Mbr16100CT to-220 Open Details in New Window [Aug 23, 2023]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 150V Schottky Barrier Diode Mbr20150CT to-220
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445.

20A 150V Schottky Barrier Diode Mbr20150CT to-220 Open Details in New Window [Aug 23, 2023]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 150V Low Schottky Barrier Diode Mbr20r150CT to-220
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446.

20A 150V Low Schottky Barrier Diode Mbr20r150CT to-220 Open Details in New Window [Aug 23, 2023]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 60V Schottky Barrier Diode Mbr3060CT to-220m
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447.

30A 60V Schottky Barrier Diode Mbr3060CT to-220m Open Details in New Window [Aug 23, 2023]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Schottky Barrier Diode Mbr2060CT to-220
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448.

20A 60V Schottky Barrier Diode Mbr2060CT to-220 Open Details in New Window [Aug 23, 2023]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 200V Schottky Barrier Diode Hmbr30200CT to-220
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449.

30A 200V Schottky Barrier Diode Hmbr30200CT to-220 Open Details in New Window [Aug 23, 2023]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Applications converters free-wheeling diodes reverse battery protection Typical applications are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 200V Schottky Barrier Diode Mbr10200CT to-220
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450.

10A 200V Schottky Barrier Diode Mbr10200CT to-220 Open Details in New Window [Aug 23, 2023]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd