Jiangsu Profile
Famous Export Brand
Product List
1. Integrated Circuit, Hall Effect Sensor (AH3031) , Encoder Sensor, Magnetic Sensor IC, Dirt Bike ... 
[Apr 11, 2024]
[Apr 11, 2024] 
Product Description These Hall-effect switch integrated circuits are monolithic integrated circuit consisting of a voltage regulator, hallvoltage generator, differential amplifier. Features Wide supply voltage ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
2. Semiconductor, Integrated Circuit, Ah3144 Digital Unipolar Hall IC, E-Bike Hand Held, Electronic ... [Apr 11, 2024]
[Apr 11, 2024]
Product Description 1 Features and Benefits High sensitivity digital output Stable over the entire temperature range Wide operating voltage range: 4.5V ~ 24V Strong resistance to mechanical stress Reverse power ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
3. 800V 7A N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off [Dec 15, 2023]
[Dec 15, 2023]
PARAMETER SYMBOL VALUE UNIT 7N80/I7N80/E7N80 F7N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
4. Triac Bidirectional Thyristor 4A Bt136 **%off [Jul 25, 2023]
[Jul 25, 2023]
Description BT136E series triacs with low holding and latchingcurrent are especially recommended for use onmiddle and small resistance type power load. TO-220F provides insulation voltage rated at 2000V RMS ...
5. 110A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06e [Sep 07, 2023]
[Sep 07, 2023]
PARAMETER SYMBOL VALUE UNIT DH066N06/DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
6. Automotive Button Diode Ar254/Ars254/Ar354/Ars354/Ar504/Ars504 [Mar 21, 2024]
[Mar 21, 2024]
35A 400V AUTOMOTIVE BUTTON DIODE-AR354/RA354 1.Datasheet: 2.Products list: AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM (A)8.3ms single ...
7. 30A 200V Schottky Barrier Diode Mbr30100CT to-220 & Mbr30100nct to-3pn [Jul 25, 2023]
[Jul 25, 2023]
Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
8. P-channel Enhancement Mode Power MOSFET JMTL2301C SOT-23 [Sep 19, 2022]
[Sep 19, 2022]
Product Description Features VDS = -20V, ID = -3A RDS(ON) < 70mΩ @ VGS = -4.5V RDS(ON) < 100mΩ @ VGS = -2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product ...
9. 21A 650V N-Channel Super Junction Power Mosfet Dhsj21n65W to-247 [Sep 15, 2023]
[Sep 15, 2023]
Features Fast switching Low on resistance(Rdson≤0.165Ω) Low gate charge(Typ: 50nC) Low reverse transfer capacitances(Typ: 3.5pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...
10. Surface Mount Fast Switching Diode Ll-34 Bav100 Bav101 Bav102 Bav103 [Mar 23, 2023]
[Mar 23, 2023]
Product Description Features Case: SOD-80/LL34, Glass Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.05 grams (approx.) Company Profile Kunshan Huateng Electronics ...
11. Passivated Bridge Rectifier diode MB1S [Nov 01, 2022]
[Nov 01, 2022]
Product Description FEATURES: Glass Passivated Chip Junction Reverse Voltage - 100 to 1000 V Forward Current - 0.8 A High Surge Current Capability Designed for Surface Mount Application • MECHANICAL ...
12. Insulated Gate Bipolar Transistor IGBT G40n120d to-247 [Jul 25, 2023]
[Jul 25, 2023]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
13. RS1A Fast Recovery Rectifier Diode [Mar 23, 2023]
[Mar 23, 2023]
Product Description 1-The information given here, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised ...
14. 5A 200V N-Channel Enhancement Mode Power Mosfet B5n20 to-251 [Dec 12, 2022]
[Dec 12, 2022]
PARAMETER SYMBOL VALUE UNIT 5N20/I5N20/E5N20/B5N20/D5N20 F5N20 Drian-Source Voltage VDS 200 V Gate-Drain Voltage VGS ±30 V Drain ...
15. 1200V IGBT Module Dgc40c120m2t [Feb 26, 2024]
[Feb 26, 2024]
40A 1200V PIM in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which ...
