Jiangsu Profile
Product List
901. 17A 650V N-Channel Super Junction Power Mosfet Dhfsj17n65 to-220f 
[Oct 08, 2023]
[Oct 08, 2023] PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
902. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b [Oct 08, 2023]
[Oct 08, 2023] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
903. 6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b [Oct 08, 2023]
[Oct 08, 2023] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
904. 80A 40V N-Channel Enhancement Mode Power Mosfet Dh065n04D to-252b [Oct 07, 2023]
[Oct 07, 2023] PARAMETER SYMBOL VALUE DH065N04D UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 56 A Drain ...
905. 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247 [Oct 07, 2023]
[Oct 07, 2023] PARAMETER SYMBOL VALUE UNIT 9N90B Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 9 0A (T=100ºC) 5.7 A Drain ...
906. 60A 30V N-Channel Enhancement Mode Power Mosfet Dh081n03D to-252b [Oct 07, 2023]
[Oct 07, 2023] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
907. 100A 85V N-Channel Enhancement Mode Power Mosfet Dh85n08 to-220c [Oct 06, 2023]
[Oct 06, 2023] PARAMETER SYMBOL VALUE UNIT DH85N08/ DHE85N08 DHF85N08F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
908. 50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12D to-252b [Oct 06, 2023]
[Oct 06, 2023] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 50 (Tc=100ºC) 35 A Drain ...
909. 30A 600V Fast Recovery Diode Mur3060 to-220-2L [Oct 06, 2023]
[Oct 06, 2023] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
910. 30A 600V Fast Recovery Diode Murf3060 to-220-2L [Oct 06, 2023]
[Oct 06, 2023] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
911. 320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b [Oct 06, 2023]
[Oct 06, 2023] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...
912. 15A 600V Fast Recovery Diode Murf1560 to-220f-2L [Sep 28, 2023]
[Sep 28, 2023] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
913. 220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07 to-220c [Sep 28, 2023]
[Sep 28, 2023] PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
914. 50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c [Sep 28, 2023]
[Sep 28, 2023] PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
915. 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c [Sep 27, 2023]
[Sep 27, 2023] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
