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110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263
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1201.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263 Open Details in New Window [Oct 20, 2023]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263
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1202.

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263 Open Details in New Window [Oct 20, 2023]

PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS065N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88e to-263
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1203.

250A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88e to-263 Open Details in New Window [Oct 20, 2023]

PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e
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1204.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e Open Details in New Window [Oct 20, 2023]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263
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1205.

155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263 Open Details in New Window [Oct 16, 2023]

PARAMETER SYMBOL VALUE UNIT DH035N04/ DHE035N04 /DHB035N04/ DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263
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1206.

75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263 Open Details in New Window [Oct 16, 2023]

PARAMETER SYMBOL VALUE UNIT DH100P70E Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -75 A (T=100ºC) -52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 300V Fast Recovery Diode Mur80g30nct to-3pn
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1207.

80A 300V Fast Recovery Diode Mur80g30nct to-3pn Open Details in New Window [Oct 12, 2023]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263
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1208.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263 Open Details in New Window [Oct 12, 2023]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263
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1209.

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263 Open Details in New Window [Oct 12, 2023]

PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn
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1210.

240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn Open Details in New Window [Oct 09, 2023]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 240 A BVGSS ±20 V EAS - - 1190 mJ Ptot - - 2 W Rdson - - 2.2 mΩ Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263
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1211.

175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 Open Details in New Window [Oct 09, 2023]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 200V Fast Recovery Diode Mur7020nca to-3pn
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1212.

70A 200V Fast Recovery Diode Mur7020nca to-3pn Open Details in New Window [Oct 09, 2023]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b
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1213.

33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b Open Details in New Window [Oct 08, 2023]

PARAMETER SYMBOL VALUE UNIT DH240N06L DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn
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1214.

13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn Open Details in New Window [Oct 07, 2023]

PARAMETER SYMBOL VALUE UNIT 13N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 13 0A (T=100ºC) 6.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 200V Fast Recovery Diode Mur6020nct to-3pn
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1215.

60A 200V Fast Recovery Diode Mur6020nct to-3pn Open Details in New Window [Oct 07, 2023]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd