Jiangsu Profile
Product List
1321. 100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b 
[Nov 23, 2023]
[Nov 23, 2023] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
1322. 40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c [Nov 23, 2023]
[Nov 23, 2023] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...
1323. 40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c [Nov 23, 2023]
[Nov 23, 2023] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
1324. 40A 100V Schottkybarrierdiode Mbrf40100CT to-220f [Nov 23, 2023]
[Nov 23, 2023] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...
1325. 180A 85V N-Channel Enhancement Mode Power Mosfet Dsd040n08n3a to-252 [Nov 23, 2023]
[Nov 23, 2023] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
1326. -85A -60V P-Channel Enhancement Mode Power Mosfet Dtd125p06la to-252 [Nov 08, 2023]
[Nov 08, 2023] Features High density cell design for ultra low Rdson 175°C operating temperature Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for ...
1327. 85A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15D [Oct 20, 2023]
[Oct 20, 2023] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...
1328. 81A 80V N-Channel Enhancement Mode Power Mosfet Dh060n08 to-220c [Oct 19, 2023]
[Oct 19, 2023] PARAMETER SYMBOL VALUE UNIT DH060N08 /DH060N08B DH060N08D/ DH060N08E DH060N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1329. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lf to-220f [Sep 28, 2023]
[Sep 28, 2023] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
1330. 100A 85V N-Channel Enhancement Mode Power Mosfet Dhe85n08 to-263 [Sep 26, 2023]
[Sep 26, 2023] PARAMETER SYMBOL VALUE UNIT DH85N08/DHI85N08/DHE85N08 DHF85N08 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1331. 80A 400V Fast Recovery Diode Mur80fu40nct to-3pn [Sep 14, 2023]
[Sep 14, 2023] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1332. 50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c [Sep 13, 2023]
[Sep 13, 2023] PARAMETER SYMBOL VALUE UNIT DH150N12 / DH150N12E DH150N12B / DH150N12D DH150N 12F Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1333. 20A 100V Schottkybarrierdiode Mbra20100CT to-220m [Sep 12, 2023]
[Sep 12, 2023] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Applications converters free-wheeling diodes reverse battery protection Typical ...
1334. 30A 100V Schottky Barrier Diode Mbrd30100CT to-252b [Sep 11, 2023]
[Sep 11, 2023] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching ...
1335. 130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263 [Sep 06, 2023]
[Sep 06, 2023] PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
