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25A, 50-1000V Soza Cell Diode Sc25g
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631.

25A, 50-1000V Soza Cell Diode Sc25g Open Details in New Window [Mar 21, 2024]

25A,50-1000V Soza Cell Diode SC25G Soza Cell Diode we can supply 25A, 35A,50A. volt is 50-1000V Soza Cell Diode Part Number Voltage 25 Ampere SC25A--SC25M 50-1000V 35 Ampere SC35A--SC35M 50 ...

Company: Changzhou Shunye Electronics Co., Ltd.

35A, 50-1000V Soza Cell Diode Sc35g
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632.

35A, 50-1000V Soza Cell Diode Sc35g Open Details in New Window [Mar 20, 2024]

35A,50-1000V Soza Cell Diode SC35G Soza Cell Diode we can supply 25A, 35A,50A. volt is 50-1000V Soza Cell Diode Part Number Voltage 25 Ampere SC25A--SC25M 50-1000V 35 Ampere SC35A--SC35M 50 ...

Company: Changzhou Shunye Electronics Co., Ltd.

Tvs Diode 400W Sot-23 Pjdlc05
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633.

Tvs Diode 400W Sot-23 Pjdlc05 Open Details in New Window [Mar 20, 2024]

400W TVS SOT-23 PJDLC05,PJDLC12,PJDLC15,PJDLC24 1.Datasheet: 2.Products list: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse ...

Company: Changzhou Shunye Electronics Co., Ltd.

30A 200V Schottky Barrier Diode Mbrf30200CT to-220f
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634.

30A 200V Schottky Barrier Diode Mbrf30200CT to-220f Open Details in New Window [Mar 18, 2024]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current TC=120ºC ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b
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635.

100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b Open Details in New Window [Mar 16, 2024]

PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 60V Low Vf Schottkybarrierdiode Mbr40r60CT to-220c
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636.

40A 60V Low Vf Schottkybarrierdiode Mbr40r60CT to-220c Open Details in New Window [Feb 28, 2024]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1700V IGBT Module Dgc75c170m2t
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637.

1700V IGBT Module Dgc75c170m2t Open Details in New Window [Feb 26, 2024]

75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

34mm 75A 1200V Half Bridge IGBT Module
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638.

34mm 75A 1200V Half Bridge IGBT Module Open Details in New Window [Feb 26, 2024]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
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639.

18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p Open Details in New Window [Dec 09, 2023]

18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

G65p06K Package to-252 Substitute Semiconductor Power Transistor Mosfet
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640.

G65p06K Package to-252 Substitute Semiconductor Power Transistor Mosfet Open Details in New Window [Oct 22, 2021]

Product Description printer power supply applied GOFORD G65P06K VDS 60V ID65A DPAK P-channel mosfet Part Number G65P06K VDSS -60V ID -65A RDS 13mΩ @ vgs=10V Vth -1.8V Package TO-252 Ciss 5814 ...

Company: Wuxi Goford Semiconductor Co., Ltd.

0.8A/1.0A, 200-1000V---Silicon Bridge Diode---Tb2s, Tb4s, Tb6s, Tb8s, Tb10s
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641.

0.8A/1.0A, 200-1000V---Silicon Bridge Diode---Tb2s, Tb4s, Tb6s, Tb8s, Tb10s Open Details in New Window [Mar 21, 2024]

0.8A/1.0A,200-1000V---Silicon Bridge Diode---TB2S,TB4S,TB6S,TB8S,TB10S We are specialised in designing and manufacturing diodes and bridge rectifiers. If customers require, we can also offer OEM service according to ...

Company: Changzhou Shunye Electronics Co., Ltd.

8.0 a, 50-1000V--Kbu Package Rectifier Diode---Kbu8a-Kbu8m
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642.

8.0 a, 50-1000V--Kbu Package Rectifier Diode---Kbu8a-Kbu8m Open Details in New Window [Mar 21, 2024]

8.0 A, 50-1000V--KBU package rectifier diode---KBU8A-KBU8M We are specialised in designing and manufacturing diodes and bridge rectifiers. If customers require, we can also offer OEM service according to customer's ...

Company: Changzhou Shunye Electronics Co., Ltd.

8.0A, 50-1000V---Kbu Package Diode Rectifier---Kbu8a-Kbu8m
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643.

8.0A, 50-1000V---Kbu Package Diode Rectifier---Kbu8a-Kbu8m Open Details in New Window [Mar 21, 2024]

8.0 A, 50-1000V--KBU package diode rectifier---KBU8A-KBU8M We are specialised in designing and manufacturing diodes and bridge rectifiers. If customers require, we can also offer OEM service according to customer's ...

Company: Changzhou Shunye Electronics Co., Ltd.

Diac: dB3, dB4 Do-41, a-405, Do-35 Rectifier Diode
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644.

Diac: dB3, dB4 Do-41, a-405, Do-35 Rectifier Diode Open Details in New Window [Mar 21, 2024]

DIACS DIODE-DB3 1.Datasheet: 2.Products list: DIACS TYPE Breakover Voltage Maximum Maximum Peak breakover Current IR ...

Company: Changzhou Shunye Electronics Co., Ltd.

Bridge Rectifier Diode Df06
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645.

Bridge Rectifier Diode Df06 Open Details in New Window [Mar 21, 2024]

2.0 A 50V-1000V ---diode rectifier bridge-KBP2005-KBP210 We are specialised in designing and manufacturing diodes and bridge rectifiers. If customers require, we can also offer OEM service according to customer's ...

Company: Changzhou Shunye Electronics Co., Ltd.