Jiangsu Profile
Product List
631. 25A, 50-1000V Soza Cell Diode Sc25g [Mar 21, 2024]
25A,50-1000V Soza Cell Diode SC25G Soza Cell Diode we can supply 25A, 35A,50A. volt is 50-1000V Soza Cell Diode Part Number Voltage 25 Ampere SC25A--SC25M 50-1000V 35 Ampere SC35A--SC35M 50 ...
632. 35A, 50-1000V Soza Cell Diode Sc35g [Mar 20, 2024]
35A,50-1000V Soza Cell Diode SC35G Soza Cell Diode we can supply 25A, 35A,50A. volt is 50-1000V Soza Cell Diode Part Number Voltage 25 Ampere SC25A--SC25M 50-1000V 35 Ampere SC35A--SC35M 50 ...
633. Tvs Diode 400W Sot-23 Pjdlc05 [Mar 20, 2024]
400W TVS SOT-23 PJDLC05,PJDLC12,PJDLC15,PJDLC24 1.Datasheet: 2.Products list: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse ...
634. 30A 200V Schottky Barrier Diode Mbrf30200CT to-220f [Mar 18, 2024]
PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current TC=120ºC ...
635. 100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b [Mar 16, 2024]
PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
636. 40A 60V Low Vf Schottkybarrierdiode Mbr40r60CT to-220c [Feb 28, 2024]
SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
637. 1700V IGBT Module Dgc75c170m2t [Feb 26, 2024]
75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...
638. 34mm 75A 1200V Half Bridge IGBT Module [Feb 26, 2024]
1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
639. 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p [Dec 09, 2023]
18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
640. G65p06K Package to-252 Substitute Semiconductor Power Transistor Mosfet [Oct 22, 2021]
Product Description printer power supply applied GOFORD G65P06K VDS 60V ID65A DPAK P-channel mosfet Part Number G65P06K VDSS -60V ID -65A RDS 13mΩ @ vgs=10V Vth -1.8V Package TO-252 Ciss 5814 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
641. 0.8A/1.0A, 200-1000V---Silicon Bridge Diode---Tb2s, Tb4s, Tb6s, Tb8s, Tb10s [Mar 21, 2024]
0.8A/1.0A,200-1000V---Silicon Bridge Diode---TB2S,TB4S,TB6S,TB8S,TB10S We are specialised in designing and manufacturing diodes and bridge rectifiers. If customers require, we can also offer OEM service according to ...
642. 8.0 a, 50-1000V--Kbu Package Rectifier Diode---Kbu8a-Kbu8m [Mar 21, 2024]
8.0 A, 50-1000V--KBU package rectifier diode---KBU8A-KBU8M We are specialised in designing and manufacturing diodes and bridge rectifiers. If customers require, we can also offer OEM service according to customer's ...
643. 8.0A, 50-1000V---Kbu Package Diode Rectifier---Kbu8a-Kbu8m [Mar 21, 2024]
8.0 A, 50-1000V--KBU package diode rectifier---KBU8A-KBU8M We are specialised in designing and manufacturing diodes and bridge rectifiers. If customers require, we can also offer OEM service according to customer's ...
644. Diac: dB3, dB4 Do-41, a-405, Do-35 Rectifier Diode [Mar 21, 2024]
DIACS DIODE-DB3 1.Datasheet: 2.Products list: DIACS TYPE Breakover Voltage Maximum Maximum Peak breakover Current IR ...
645. Bridge Rectifier Diode Df06 [Mar 21, 2024]
2.0 A 50V-1000V ---diode rectifier bridge-KBP2005-KBP210 We are specialised in designing and manufacturing diodes and bridge rectifiers. If customers require, we can also offer OEM service according to customer's ...