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1A 600V Low Vf Fast Recovery Rectifier Diode 1s1835
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691.

1A 600V Low Vf Fast Recovery Rectifier Diode 1s1835 Open Details in New Window [Mar 21, 2024]

1A,600V-FAST RECOVERY RECTIFIER-1S1835 1.Datasheet: 2.FR series: FAST RECOVERY RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

25A 400V Press Fit Diode Zq354 (10.5mm DIA)
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692.

25A 400V Press Fit Diode Zq354 (10.5mm DIA) Open Details in New Window [Mar 21, 2024]

35A 400V PRESS FIT DIODE -ZQ354 1.Datasheet: 2.Products list: AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics Picture VRWM IF IFSM (A)8.3ms single half VF ...

Company: Changzhou Shunye Electronics Co., Ltd.

50A, 50-1000V Soza Cell Diode Rectifier Sc50m
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693.

50A, 50-1000V Soza Cell Diode Rectifier Sc50m Open Details in New Window [Mar 21, 2024]

50A,50-1000V Soza Cell Diode rectifier SC50M Soza Cell Diode we can supply 25A, 35A,50A. volt is 50-1000V Soza Cell Diode Part Number Voltage 25 Ampere SC25A--SC25M 50-1000V 35 ...

Company: Changzhou Shunye Electronics Co., Ltd.

18A 200V N-Channel Enhancement Mode Power Mosfet 18n20 to-220c
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694.

18A 200V N-Channel Enhancement Mode Power Mosfet 18n20 to-220c Open Details in New Window [Jan 25, 2024]

PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f
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695.

8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f Open Details in New Window [Jan 25, 2024]

PARAMETER SYMBOL VALUE UNIT DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 60V Schottky Barrier Diode Mbr1060CT to-220
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696.

10A 60V Schottky Barrier Diode Mbr1060CT to-220 Open Details in New Window [Jan 10, 2024]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 45V Low Vf Schottkybarrierdiode Mbr20r45CT to-220c
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697.

20A 45V Low Vf Schottkybarrierdiode Mbr20r45CT to-220c Open Details in New Window [Dec 26, 2023]

SYMBOL RATING VBR (V) Min 45 typ 53 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.42 max 0.50 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L
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698.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L Open Details in New Window [Dec 25, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Sic Schottky Barrier Diode Dcd20d65g4 to-252
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699.

20A 650V Sic Schottky Barrier Diode Dcd20d65g4 to-252 Open Details in New Window [Dec 23, 2023]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 1200V Trenchstop Insulated Gate Bipolar Transistor G50n120d to-264 IGBT
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700.

50A 1200V Trenchstop Insulated Gate Bipolar Transistor G50n120d to-264 IGBT Open Details in New Window [Dec 23, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10I to-262
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701.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10I to-262 Open Details in New Window [Dec 23, 2023]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262
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702.

10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262 Open Details in New Window [Dec 23, 2023]

PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Sic Schottky Barrier Diode Dcc40d65g4 to-247
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703.

40A 650V Sic Schottky Barrier Diode Dcc40d65g4 to-247 Open Details in New Window [Dec 22, 2023]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 1200V Sic Schottky Barrier Diode Dcc20d120g4 to-247
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704.

20A 1200V Sic Schottky Barrier Diode Dcc20d120g4 to-247 Open Details in New Window [Dec 22, 2023]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Sic Schottky Barrier Diode Dcc20d65g4 to-247
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705.

20A 650V Sic Schottky Barrier Diode Dcc20d65g4 to-247 Open Details in New Window [Dec 22, 2023]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd